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TC2997D
REV3_20050418
2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
* 20W Typical Power at 2.45 GHz * 10dB Typical Linear Power Gain at 2.45 GHz * High Linearity: IP3 = 52 dBm Typical * High Power Added Efficiency: Nominal PAE of 40 % * Suitable for High Reliability Application * Wg = 50 mm * 100 % DC and RF Tested
PHOTO ENLARGEMENT
* Flange Ceramic Package
DESCRIPTION The TC2997D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial applications.
ELECTRICAL SPECIFICATIONS ( VDS = 10.5V, IDS = 5A @ 2.45GHz )
Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth Linear Power Gain Intercept Point of the 3rd-order Intermodulation *PSCL = 32 dBm Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance
20
CONDITIONS Output Power at 1dB Gain Compression Point
MIN 42 9
TYP 43 10 52 40 12.5 9000 -1.7 22 0.9
MAX
UNIT dBm dB dBm % A mS Volts Volts C/W
* PSCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3
TC2997D
REV3_20050418
ABSOLUTE MAXIMUM RATINGS at 25 C
Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 37 dBm 100 W 175 C - 65 C to +175 C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
FLANGE PACKAGE OUTLINE (in mm)
Gate
Source
Source
Drain
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/3
TC2997D
REV3_20050418
EVALUATION BOARD
PCB Material: FR4 ER = 4.6 Thickness = 31 mil Unit: mil
-Vg
1206
1206
Ci6, 10uF
Co7, 10uF
1206
Co6, 0.1uF Co5, 1000pF
R1, 3.9 ohm
Ci5, 0.1uF
TC2997D 386-350013-001
RF in
Ci2, 2pF
Ci4, 1000pF
Co2, 1.2pF (ATC)
+Vds
0805
Co3, 1.2pF
0805
RFout
0805
(ATC) Ci1, 0.75pF Ci3, 1.2pF
Co4, 1pF (ATC)
Co1, 1pF (ATC)
Evaluation Board Parts List
Qt'y
1 1 1 1 2 2 2 2 2
0805
Description
Reference Designator
Manufacturer
Chip Resistor(1206)3.95% Chip CAP(0603)0.75PF5% Chip CAP(0603)2PF5% Chip CAP(0603)1.2PF5% Chip CAP(0603)1000PF10% Chip CAP(0603)0.1F20% Chip CAP(1206)10F20% Chip CAP(0805)1PF0.1PF
R1 Ci1 Ci2 Ci3 Ci4, Co5 Ci5, Co6 Ci6, Co7 Co1, Co4
Chip CAP(0805)1.2PF0.1PF Co2, Co3
GRM39Y5V104Z25V GRM42-6Y5V106Z25V Murata (GRM31CF5E106ZA01L) ATC 600F 1RBT American Technical Ceramics (1pF0.1pF 250WVDC) ATC 600F 1R2BT American Technical Ceramics (1.2pF0.1pF 250WVDC)
Murata Murata Murata Murata Murata
Inventory ID Chip Resistor(1206) 3.95% GRM39COG0R75C50V GRM39COG2RC50V GRM39COG1R2C50V GRM39X7R102K50V
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/3

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